| Price | Negotiated |
| MOQ | 10 |
| Delivery Time | 2-15days |
| Brand | Vishay General Semiconductor |
| Place of Origin | CHINA |
| Certification | ROHS |
| Model Number | V20PWM45-M3/I V20PWM45HM3/I |
| Packaging Details | Standard package |
| Payment Terms | T/T, Western Union |
| Supply Ability | 500000pcs |
| Place of Origin | CHINA | Category | Electronic Components |
| Description | DIODE SCHOTTKY 45V 20A SLIMDPAK | Packaging Details | Standard package |
| Model Number | V20PWM45-M3/I V20PWM45HM3/I | Mounting Type | Surface Mount |
| Supply Ability | 500000pcs | Base part number | V20PWM45 |
| Certification | ROHS | Brand Name | Vishay General Semiconductor |
| Payment Terms | T/T, Western Union | Series | TMBS Trench MOS Barrier Schottky Rectifier |
| Type | Transistors - FETs, MOSFETs - Single | Details | Diode Schottky 45 V 20A Surface Mount SlimDPAK |
| Price | Negotiated | Delivery Time | 2-15days |
| Minimum Order Quantity | 10 | Family | Discrete Semiconductor Products-Rectifier |
| Package | DPak (2 Leads + Tab), TO263 | Stock | In Stock |
V20PWM45
V20PWM45C-M3/I
Vishay
Semiconductor
High
Current
Density
TMBS
Trench
MOS
Barrier
Schottky
Rectifier
DPAK
Discrete
Semiconductor
Products
V20PWM45
:High
Current
Density
Surface-Mount
TMBS®
(Trench
MOS
Barrier
Schottky)
Rectifier
Ultra
Low
VF
=
0.35
V
at
IF
=
5
A
V20PWM45C High
Current
Density
Surface-Mount
TMBS®
(Trench
MOS
Barrier
Schottky)
Rectifier
Ultra
Low
VF
=
0.39
V
at
IF
=
5
A
APPLICATIONS
For
use
in
low
voltage
high
frequency
DC/DC
converters,
freewheeling
diodes,
and
polarity
protection
applications
FEATURES
•
Very
low
profile
-
typical
height
of
1.3
mm
•
Trench
MOS
Schottky
technology
•
Ideal
for
automated
placement
•
Low
forward
voltage
drop,
low
power
losses
•
High
efficiency
operation
•
Meets
MSL
level
1,
per
J-STD-020,
LF
maximum
peak
of
260
°C
•
AEC-Q101
qualified
available
-
Automotive
ordering
code:
base
P/NHM3
•
Material
categorization
Description
This
HEXFET®
Power
MOSFET
utilizes
the
latest
processing
techniques
to
achieve
extremely
low
on-resistance
per
silicon
area.
Additional
features
of
this
product
are
a
175°C
junction
operating
temperature,
fast
switching
speed
and
improved
repetitive
avalanche
rating.
These
features
combine
to
make
this
design
an
extremely
efficient
and
reliable
device
for
use
in
a
wide
variety
of
applications.
Features
:
Advanced
Process
Technology
Ultra
Low
On-Resistance
175°C
Operating
Temperature
Fast
Switching
Repetitive
Avalanche
Allowed
up
to
Tjmax
D-Pak
IRLR3915PbF
I-Pak
IRLU3915PbF
Lea
|
Category
|
Discrete
Semiconductor
Products
|
|
Diodes
-
Rectifiers
-
Single
|
|
|
Mfr
|
Vishay
General
Semiconductor
-
Diodes
Division
|
|
Series
|
Automotive,
AEC-Q101,
eSMP®,
TMBS®
|
|
Package
|
Tape
&
Reel
(TR)
|
|
Part
Status
|
Active
|
|
Diode
Type
|
Schottky
|
|
Voltage
-
DC
Reverse
(Vr)
(Max)
|
45
V
|
|
Current
-
Average
Rectified
(Io)
|
20A
|
|
Voltage
-
Forward
(Vf)
(Max)
@
If
|
660
mV
@
20
A
|
|
Speed
|
Fast
Recovery
=<
500ns,
>
200mA
(Io)
|
|
Current
-
Reverse
Leakage
@
Vr
|
700
µA
@
45
V
|
|
Capacitance
@
Vr,
F
|
3100pF
@
4V,
1MHz
|
|
Mounting
Type
|
Surface
Mount
|
|
Package
/
Case
|
TO-252-3,
DPak
(2
Leads
+
Tab),
SC-63
|
|
Supplier
Device
Package
|
SlimDPAK
|
|
Operating
Temperature
-
Junction
|
-40°C
~
175°C
|
|
Base
Product
Number
|
V20PWM45
|
| Part number | V20PWM45-M3/I V20PWM45HM3/I |
| Base part number | V20PWM45C-M3/I |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Part number | MFG | Package Type |
| BYV26C | VISHAY Semiconductors | SOD-57 |
| BYV26EGP | VISHAY Semiconductors | DO-15 |
| BYV26E-TAP | VISHAY Semiconductors | SOD-57 |
| BYV26EGP | VISHAY Semiconductors | DO-15 |
| BYV26E-TAP | VISHAY Semiconductors | SOD-57 |
| BYV26C-TAP | VISHAY Semiconductors | SOD-57 |
| SI2309CDS-T1-GE3 | VISHAY Semiconductors | SOT-23 |
| SI2301CDS-T1-GE3 | VISHAY Semiconductors | SOT-23 |
| SI2307CDS-T1-GE3 | VISHAY Semiconductors | SOT-23 |
| SF1600-TAP | VISHAY Semiconductors | SOD-57 |
| SF1600-TAP | VISHAY Semiconductors | SOD-57 |
| SI2333CDS-T1-GE3 | VISHAY Semiconductors | SOT-23 |
| SI2303CDS-T1-GE3 | VISHAY Semiconductors | SOT-23 |
| SI2304DDS-T1-GE3 | VISHAY Semiconductors | SOT-23 |
| SI2302CDS-T1-GE3 | VISHAY Semiconductors | SOT-23 |
| SI2305CDS-T1-GE3 | VISHAY Semiconductors | SOT-23 |
| SBYV26C | VISHAY Semiconductors | DO-41 |
| BZX55C24-TAP | VISHAY Semiconductors | DO-35 |
| BYV27-200 | VISHAY Semiconductors | SOD-57 |
| BYV27-600-TAP | VISHAY Semiconductors | SOD-57 |
| BYV27-600-TAP | VISHAY Semiconductors | SOD-57 |
| BYV27-200-TAP | VISHAY Semiconductors | SOD-57 |
| BYV28-200-TAP | VISHAY Semiconductors | SOD-64 |
| SBYV26C | VISHAY Semiconductors | DO-41 |
